Rijo Baby
Rijo Baby received his Ph.D. from the Indian Institute of Science (IISc) in Bangalore, India. He worked on developing normally-on and normally-off AlGaN/GaN HEMT devices for high-power applications during his Ph.D. Currently, he has joined as a Postdoctoral Researcher with Prof. Elaheh Ahmadi's Wide Bandgap Materials and Electronics Lab at the University of California, Los Angeles. He is working on scaled N-polar GaN devices for high-frequency applications and joined the group in the fall of 2023."