Rohith Soman

Rohith Soman earned his Ph.D. and M.E. degrees from the Indian Institute of Science (IISc), Bangalore, India. During his Ph.D., he focused on the development of normally-off AlGaN/GaN HEMT devices for high-power applications. His M.E. project involved the creation of gas sensors for detecting environmentally hazardous gases.

Presently, he is engaged in research at the Chowdhury group at Stanford, where his work revolves around the integration of diamond with N-polar GaN devices. This integration aims to enhance heat spreading, ultimately realizing high-efficiency radio-frequency amplifiers.