N-polar GaN Growth on Bulk GaN (GoG)
TASK LEADER

Elaheh Ahmadi
UCLA
COLLABORATIVE FACULTY
Current Students/Postdocs

Oguz Odabasi
University of Michigan

Harsh Rana
University of Michigan

Yahia Ibrahim
University of Michigan

Rijo Baby
UCLA
Past members
Irfan Khan
Task Objective
The objective of this task is to address the issue seen in N-polar devices where the channel mobility is reduced at low charge densities, reducing gain. The low charge density operation is needed for deeper class-AB operation for the highest drain efficiency, but the lower mobility reduces gain, reducing PAE.